PART |
Description |
Maker |
2N2222A |
HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA HIGH SPEED MEDIUM POWER / NPN SWITCHING TRANSISTOR
|
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
|
MCA104 |
Multi-Chip Array Two NPN and Two PNP High Speed / Medium Power Switching Transistors MULTI-CHIP ARRAY TWO NPN AND TWO PNP HIGH SPEED, MEDIUM POWER SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
|
Semelab PLC SEME-LAB[Seme LAB]
|
CM30MD3-12H |
MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE 中功率开关使用平面性基地型,绝缘型 MEDIUM POWER SWITCHING USE FLAT-BASE TYPE/ INSULATED TYPE
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
|
FS3UM-10 FS3UM |
Power MOSFETs: FS Series, Medium Voltage, 500V Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
|
BD241C BD241A |
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
|
Comset Semiconductor
|
BD238 BD234 BD236 |
Medium Power Linear and Switching Applications
|
FAIRCHILD[Fairchild Semiconductor]
|
CM50MD-12H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
QM30DY-HB QM30 |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
QM75TX-HB |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
SST440107 |
NPN Medium Power Transistor (Switching)
|
Rohm
|
QM30E2Y QM30 |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
BD411 BD439 |
Medium Power Linear and Switching Applications
|
FAIRCHILD[Fairchild Semiconductor]
|